行業動態
典型規格見下表
Semi-conducting Ge Specifications
| Growth Method | VGF |
| Dopant | n-type: As; p-type: Ga |
| Wafer Shape | Round (DIA: 2" 4" 6") |
| Surface Orientation** | (100)±0.5° |
**Other Orientations maybe available upon request
| Dopant | As (n-type) | Ga (p-type) |
| Resistivity (?.cm) | 0.05-0.25 | 0.005-0.04 |
| Etch Pitch Density (cm2) | ≤ 300 | ≤ 300 |
| Wafer Diameter (mm) | 50.8±0.3 | 100±0.3 |
| Thickness (μm) | 175±25 | 175±25 |
| TTV [P/P] (μm) | ≤ 15 | ≤ 15 |
| WARP (μm) | ≤ 25 | ≤ 25 |
| IF* (mm) | 17±1 | 32.5±1 |
| OF (mm) | 7±1 | 18±1 |
| Polish** | E/E, P/E, P/G | E/E, P/E, P/G |
| Backside Ra (μm)*** | < 0.1 | < 0.1 |
深圳泛美戰略金屬資源有限公司供應鍺片、鍺單晶、單晶鍺片、鍺粒、進口純鍺片供應Ge wafer。 歡迎廣大客戶來電咨詢洽談交易，18928450898
``````````````````````更詳細要求請來電咨詢！``````````````````````````